ksmb6n60c / KSMI6N60C 600v n-channel mosfet general description these n-channel enhancement mode power field effect transistors are produced using kersemi proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. features ? 5.5a, 600v, r ds(on) = 2.0 ? @v gs = 10 v ? low gate charge ( typical 16 nc) ? low crss ( typical 7 pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability absolute maximum ratings t c = 25c unless otherwise noted * drain current limited by maximum junction temperature. thermal characteristics * when mounted on the minimum pad size recommended (pcb mount) symbol parameter ksmb6n60c / KSMI6N60C units v dss drain-source voltage 600 v i d drain current - continuous (t c = 25c) 5.5 5.5 * a - continuous (t c = 100c) 3.3 3.3 * a i dm drain current - pulsed (note 1) 22 22 * a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 300 mj i ar avalanche current (note 1) 5.5 a e ar repetitive avalanche energy (note 1) 12.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 125 w - derate above 25c 1.0 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case - 1.0 c / w r ja thermal resistance, junction-to-ambient* - 40 c / w r ja thermal resistance, junction-to-ambient - 62.5 c / w ! ! ! ! ! ! ! ! ! ! ! ! ? ? ? ? ! ! ! ! ! ! ! ! ! ! ! ! ? ? ? ? s d g to-262 to-263 2014-8-1 1 www.kersemi.com
electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 18.2mh, i as = 5.5 a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 5.5a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 600 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.6 -- v/c i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 1 a v ds = 480 v, t c = 125c -- -- 10 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 2.75 a -- 1.7 2.0 ? g fs forward transconductance v ds = 40 v, i d = 2.75 a (note 4) -- 4.8 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 620 810 pf c oss output capacitance -- 65 85 pf c rss reverse transfer capacitance -- 7 10 pf switching characteristics t d(on) turn-on delay time v dd = 300 v, i d = 5.5a, r g = 25 ? (note 4, 5) -- 15 40 ns t r turn-on rise time -- 45 100 ns t d(off) turn-off delay time -- 45 100 ns t f turn-off fall time -- 45 100 ns q g total gate charge v ds = 480 v, i d = 5.5a, v gs = 10 v (note 4, 5) -- 16 20 nc q gs gate-source charge -- 3.5 -- nc q gd gate-drain charge -- 6.5 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 5.5 a i sm maximum pulsed drain-source diode forward current -- -- 22 a v sd drain-source diode forward voltage v gs = 0 v, i s = 5.5 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 5.5 a, di f / dt = 100 a/ s (note 4) -- 310 -- ns q rr reverse recovery charge -- 2.1 -- c ksmb6n60c / KSMI6N60C 2014-8-1 2 www.kersemi.com
typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 2. transfer characteristics figure 1. on-region characteristics 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 200 400 600 800 1000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0481216 0 2 4 6 8 10 12 v ds = 300v v ds = 120v v ds = 480v note : i d = 5.5a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 02468101214 0 1 2 3 4 5 6 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] figure 3. on-resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature ksmb6n60c / KSMI6N60C 2014-8-1 3 www.kersemi.com
typical characteristics (continued) figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 25 50 75 100 125 150 0 1 2 3 4 5 i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 100 ms dc 10 ms 1 ms 100 s operation in this area is limited by r ds( on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 2.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 1.00 /w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec] t 1 p dm t 2 figure 11. transient thermal response curve ksmb6n60c / KSMI6N60C 2014-8-1 4 www.kersemi.com
gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d( on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d( on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p ksmb6n60c / KSMI6N60C 2014-8-1 5 www.kersemi.com
peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- ksmb6n60c / KSMI6N60C 2014-8-1 6 www.kersemi.com
package dimensions 10.00 0.20 10.00 0.20 (8.00) (4.40) 1.27 0.10 0.80 0.10 0.80 0.10 (2xr0.45) 9.90 0.20 4.50 0.20 0.10 0.15 2.40 0.20 2.54 0.30 15.30 0.30 9.20 0.20 4.90 0.20 1.40 0.20 2.00 0.10 (0.75) (1.75) (7.20) 0 ~3 1.20 0.20 9.20 0.20 15.30 0.30 4.90 0.20 (0.40) 2.54 typ 2.54 typ 1.30 +0.10 ?.05 0.50 +0.10 ?.05 d 2 -pak ksmb6n60c / KSMI6N60C 2014-8-1 7 www.kersemi.com
package dimensions (continued) 9.90 0.05 0.50 +0.10 0.05 i 2 -pak ksmb6n60c / KSMI6N60C 2014-8-1 8 www.kersemi.com
|
